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FY8AAJ-03F
High-Speed Switching Use Nch Power MOS FET
REJ03G0280-0100 Rev.1.00 Aug.20.2004
Features
* * * * Drive voltage : 4 V VDSS : 30 V rDS(ON) (max) : 28 m ID : 8 A
Outline
SOP-8
5,6,7,8
5 8 4 1
4
1,2,3. Source 4. Gate 5,6,7,8. Drain
1,2,3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Ratings 30 20 8 56 8 1.5 6.0 1.7 - 55 to +150 - 55 to +150 0.07 Unit V V A A A A A W C C g Conditions VGS = 0 V VDS = 0 V
L = 10 H
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FY8AAJ-03F
Electrical Characteristics
(Tch = 25C)
Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Rth(ch-a) trr Min. 30 20 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 1.5 22 31 35 0.176 13 600 200 90 10 15 40 6.5 13.8 1.6 3.5 0.75 -- 40 Max. -- -- 0.1 10 2.0 28 43 50 0.224 -- -- -- -- -- -- -- -- -- -- -- 1.10 73.5 -- Unit V V mA A V m m m V S pF pF pF ns ns ns ns nC nC nC V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V ID = 4 A, VGS = 4.5 V ID = 4 A, VGS = 4 V ID = 8 A, VGS = 10 V ID = 8 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 15 V, ID = 4 A, VGS = 10 V, RG = 5
VDD = 15 V, ID = 8 A, VGS = 10 V IS = 1.5 A, VGS = 0 V Channel to air IS = 1.5 A, dis/dt = - 50 A/s
Rev.1.00, Aug.20.2004, page 2 of 6
FY8AAJ-03F
Performance Curves
Drain Power Dissipation Derating Curve
2.0
Maximum Safe Operating Area
102 tw = 1 s 7 5 10 s 3 2 100 s 101 7 5 1 ms 3 2 10 ms 100 7 5 3 100 ms 2 10-1 Tc = 25C 7 DC 5 Single Pulse 3 2 3 5 7 100 2 3 5 7 101 2 3 5
Drain Power Dissipation PD (W)
1.2
0.8 0.4
0
0
50
100
150
200
Case Temperature Tc (C)
Drain Current ID (A)
1.6
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
50
Output Characteristics (Typical)
20
Tc = 25C Pulse Test
6V
5V 4.5V
Drain Current ID (A)
Drain Current ID (A)
40 VGS = 10V 8V 30
16
VGS = 10V 8V 6V
4V 4.5V
3.5V
4V
12
5V
3V
3.5V
20
8
3V
10
Tc = 25C Pulse Test
4
PD = 1.7W
0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6
PD = 1.7W 0.8 1.0
Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical)
1.0
Drain-Source Voltage VDS (V) On-State Resistance vs. Drain Current (Typical)
40
Tc = 25C Pulse Test
Drain-Source On-State Resistance rDS(ON) (m)
Drain-Source On-State Voltage VDS(ON) (V)
0.8
32
VGS = 4V
4.5V
0.6
24
10V
16
0.4
ID = 16A 8A 4A
0.2
8
Tc = 25C Pulse Test
0 100 2 35 7 101 23 5 7 102
0
0
2
4
6
8
10
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.1.00, Aug.20.2004, page 3 of 6
FY8AAJ-03F
Forward Transfer Admittance vs. Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
103 7 VDS = 10V Pulse Test 5 4 Tc = 25C 3 75C 2
Transfer Characteristics (Typical)
50
Drain Current ID (A)
40
Tc = 25C VDS = 10V Pulse Test
30
125C
102 7 5 4 3 2
101 100
20
10
0
0
2
4
6
8
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical)
Tch = 25C 2 f = 1MHz VGS = 0V 104 7 5
3 2 103 7 5 3
102 7 5 4 3 2 101 7 5 4 3 2 100 100
Drain Current ID (A)
Switching Characteristics (Typical)
Ciss
Switching Time (ns)
td(off)
Capacitance (pF)
tr td(on) tf
Coss Crss
3 10-1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
Tch = 25C VDD = 15V VGS = 10V RG = 5
2 3 4 5 7 101 2 3 4 5 7 102
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs. Gate Charge (Typical)
10
50
Source-Drain Diode Forward Characteristics (Typical)
VGS = 0V Pulse Test
Gate-Source Voltage VGS (V)
Tch = 25C ID = 8A
Source Current IS (A)
8
40
Tc = 125C
30
6
VDS = 15V 20V
4
25V
20
75C 25C
2
10
0 0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.1.00, Aug.20.2004, page 4 of 6
FY8AAJ-03F
On-State Resistance vs. Channel Temperature (Typical)
101 7 VGS = 10V I = 8A 5D 4 Pulse Test 3 2 100 7 5 4 3 2 10-1 -50 0 50 100
150
Drain-Source On-State Resistance rDS(ON) (25C)
Drain-Source On-State Resistance rDS(ON) (tC)
Gate-Source Threshold Voltage VGS(th) (V)
Threshold Voltage vs. Channel Temperature (Typical)
4.0
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
Channel Temperature Tch (C)
Channel Temperature Tch (C)
Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C)
Transient Thermal Impedance Zth(ch-c) (C/W)
Breakdown Voltage vs. Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
102 D = 1.0 7 5 0.5 3 2 0.2 101 0.1 7 5 0.05 3 0.02 2 100 7 5 3 2
VGS = 0V ID = 1mA
1.2
1.0
0.8
0.01 Single Pulse
PDM
tw
T
0.6
D = tw T
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Channel Temperature Tch (C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor D.U.T. RL
Vout Monitor
Switching Waveform
90%
RGEN
Vin Vout
10% 10% 10%
RGS
VDD
90% td(on) tr
90% td(off)
tf
Rev.1.00, Aug.20.2004, page 5 of 6
FY8AAJ-03F
Package Dimensions
8P2S-B(SOP-8)
EIAJ Package Code JEDEC Code
Conforms
Mass (g) (reference value)
0.07
Lead Material
Cu alloy
6.0
4.4
A
1.8 max
Detail A
1.5 0.10.1 0.05 or then 10max
0.9
0.15 5.0
0.4
Symbol A A1 A2 b D E e x y y1 ZD ZE
Dimension in Millimeters Min Typ Max
0.4 0.1 1.27 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.
Order Code
Lead form Surface-mounted type Surface-mounted type Standard packing Quantity Standard order code Standard order code example FY8AAJ-03F-T13 FY8AAJ-03F
Taping 3000 Type name - T +Direction (1 or 2) +3 Type name Plastic Magazine 100 (Tube) Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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